1996 Jul 30
3
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm
?
10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj
=25?C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp
= 300
?s; ??0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS
drain-source voltage
??30 V
VGDO
gate-drain voltage
open source
??30 V
VGSO
gate-source voltage
open drain
??30 V
ID
drain current
?
25 mA
IG
gate current
?
10 mA
Ptot
total power dissipation
up to Tamb
=75?C;
?
300 mW
up to Tamb
=90?C; note 1
?
300 mW
Tstg
storage temperature
?65 +150
?C
Tj
operating junction temperature
?
150
?C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a
thermal resistance from junction
to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)GSS
gate-source breakdown voltage IG
=
?1
?A; VDS
=0
?30
?
V
VGSoff
gate-source cut-off voltage ID
=10nA; VDS
=15V
?0.25
?8.0 V
VGS
gate-source voltage
ID
=200?A; VDS
=15V
BF245A
?0.4
?2.2 V
BF245B
?1.6
?3.8 V
BF245C
?3.2
?7.5 V
IDSS
drain current
VDS
=15V; VGS
=0; note1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS
gate cut-off current
VGS
=
?20 V; VDS
=0
??5nA
VGS
=
?20 V; VDS
=0; Tj
=125?C
??0.5
?A
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